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| STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFETTM II POWER MOSFET TYPE STP36NF06 STP36NF06FP s s s s VDSS 60 V 60 V RDS(on) <0.040 <0.040 ID 30 A 18 A(*) TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED TO-220FP INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STP36NF06 STP36NF06FP MARKING STP36NF06 STP36NF06FP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP36NF06 VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value STP36NF06FP 60 60 20 30 21 120 70 0.47 20 200 -55 to 175 18(*) 12 72 25 0.17 Unit V V V A A A W W/C V/ns mJ C (*) Pulse width limited by safe operating area. (*) Current Limited by Package (1) ISD 36A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 18 A, VDD = 45V October 2003 1/9 STP36NF06 STP36NF06FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max 2.14 62.5 300 TO-220FP 6 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 60 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 15 A Min. 2 0.032 0.040 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 15 A Min. Typ. 12 690 170 68 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/9 STP36NF06 STP36NF06FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 18 A VDD = 30 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 30 V ID= 36 A VGS= 10V Min. Typ. 10 40 23 6 9 31 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 18 A VDD = 30 V RG = 4.7 VGS =10 V (Resistive Load, Figure 3) Min. Typ. 27 9 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 65 155 4.8 Test Conditions Min. Typ. Max. 30 120 1.5 Unit A A V ns nC A di/dt = 100A/s ISD = 30 A VDD = 30 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP36NF06 STP36NF06FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP36NF06 STP36NF06FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/9 STP36NF06 STP36NF06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP36NF06 STP36NF06FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 G 7/9 STP36NF06 STP36NF06FP TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 8/9 STP36NF06 STP36NF06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (R) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 9/9 |
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